Semiconductor package and method of forming similar structure for top and bottom bonding pads

ABSTRACT

A semiconductor device includes a first semiconductor die. A plurality of conductive vias is formed around the first semiconductor die. A first conductive layer is formed over a first surface of the first semiconductor die and electrically connects to the plurality of conductive vias. A second conductive layer is formed over a second surface of the first semiconductor die opposite the first surface and electrically connects to the plurality of conductive vias. A first passivation layer is formed over the first surface and includes openings that expose the first conductive layer. A second passivation layer is formed over the second surface and includes openings that expose the second conductive layer. Bonding pads are formed within the openings in the first and second passivation layers and are electrically connected to the first and second conductive layers. An interconnect structure is disposed within the openings in the first and second passivation layers.

CLAIM TO DOMESTIC PRIORITY

The present application is a division of U.S. patent application Ser.No. 11/952,502, now U.S. Pat. No. 8,039,302, filed Dec. 7, 2007, andclaims priority to the foregoing parent application pursuant to 35U.S.C. §121.

FIELD OF THE INVENTION

The present invention relates in general to semiconductor packages and,more particularly, to a semiconductor device having similar structurefor top and bottom bonding pads.

BACKGROUND OF THE INVENTION

Semiconductor devices are found in many products in the fields ofentertainment, communications, networks, computers, and householdmarkets. Semiconductor devices are also found in military, aviation,automotive, industrial controllers, and office equipment. Thesemiconductor devices perform a variety of electrical functionsnecessary for each of these applications.

The manufacture of semiconductor devices involves formation of a waferhaving a plurality of die. Each semiconductor die contains hundreds orthousands of transistors and other active and passive devices performinga variety of electrical functions. For a given wafer, each die from thewafer typically performs the same electrical function. Front-endmanufacturing generally refers to formation of the semiconductor deviceson the wafer. The finished wafer has an active side containing thetransistors and other active and passive components. Back-endmanufacturing refers to cutting or singulating the finished wafer intothe individual die and then packaging the die for structural support andenvironmental isolation.

One goal of semiconductor manufacturing is to produce a package suitablefor faster, reliable, smaller, and higher-density integrated circuits(IC) at lower cost. Flip chip packages or wafer level chip scalepackages (WLCSP) are ideally suited for ICs demanding high speed, highdensity, and greater pin count. Flip chip style packaging involvesmounting the active side of the die facedown toward a chip carriersubstrate or printed circuit board (PCB). The electrical and mechanicalinterconnect between the active devices on the die and conduction trackson the carrier substrate is achieved through a solder bump structurecomprising a large number of conductive solder bumps or balls. Thesolder bumps are formed by a reflow process applied to solder materialdeposited on contact pads which are disposed on the semiconductorsubstrate. The solder bumps are then soldered to the carrier substrate.The flip chip semiconductor package provides a short electricalconduction path from the active devices on the die to the carriersubstrate in order to reduce signal propagation, lower capacitance, andachieve overall better circuit performance.

In many applications, it is desirable to stack semiconductor packagesfor a higher level of device integration. In prior stackingarrangements, the semiconductor package interconnects have used throughhole vias, solder bumps, and wire bonding. Space must be allocated tothe stacking arrangement when using bond wires. Also, the bond wires aretypically made with gold, which adds cost to the manufacturing process.The formation of through hole vias also adds manufacturing cost. Thesolder bumps for different packages are often dissimilar and properorientation to contact pads on adjacent packages must be taken intoaccount in the stacking design.

SUMMARY OF THE INVENTION

In one embodiment, the present invention is a semiconductor devicecomprising a first semiconductor die. A plurality of conductive vias isformed around the first semiconductor die. A first conductive layer isformed over a first surface of the first semiconductor die andelectrically connects to the plurality of conductive vias. A secondconductive layer is formed over a second surface of the firstsemiconductor die opposite the first surface and electrically connectsto the plurality of conductive vias. A first passivation layer is formedover the first surface and includes openings that expose the firstconductive layer. A second passivation layer is formed over the secondsurface and includes openings that expose the second conductive layer.Bonding pads are formed within the openings in the first and secondpassivation layers and are electrically connected to the first andsecond conductive layers. An interconnect structure is disposed withinthe openings in the first and second passivation layers.

In another embodiment, the present invention is a semiconductor devicecomprising a first semiconductor die. A plurality of conductive vias isformed around the first semiconductor die. A first conductive layer isformed over a first surface of the first semiconductor die andelectrically connects to the plurality of conductive vias. A secondconductive layer is formed over a second surface of the firstsemiconductor die opposite the first surface and electrically connectsto the plurality of conductive vias. A first passivation layer is formedover the first surface and includes openings that expose the firstconductive layer. A second passivation layer is formed over the secondsurface and includes openings that expose the second conductive layer.Bonding pads are formed within and follow a contour of the openings inthe first and second passivation layers and electrically connect to thefirst and second conductive layers.

In another embodiment, the present invention is a semiconductor devicecomprising a first semiconductor die. A plurality of conductive vias isformed around the first semiconductor die. A first conductive layer isformed over a first surface of the first semiconductor die andelectrically connects to the plurality of conductive vias. A secondconductive layer is formed over a second surface of the firstsemiconductor die opposite the first surface and electrically connectsto the plurality of conductive vias. A first passivation layer is formedover the first surface and includes openings that expose the firstconductive layer. A second passivation layer is formed over the secondsurface and includes openings that expose the second conductive layer.Bonding pads are formed within the openings in the first and secondpassivation layers and are aligned and electrically connected to thefirst and second conductive layers.

In another embodiment, the present invention is a semiconductor devicecomprising a first semiconductor die. A plurality of conductive vias isformed around the first semiconductor die. A first conductive layer isformed over a first surface of the first semiconductor die andelectrically connects to the plurality of conductive vias. A secondconductive layer is formed over a second surface of the firstsemiconductor die opposite the first surface and electrically connectsto the plurality of conductive vias. A first passivation layer is formedover the first surface and includes openings that expose the firstconductive layer. A second passivation layer is formed over the secondsurface and includes openings that expose the second conductive layer.Bonding pads are formed within the openings in the first and secondpassivation layers and electrically connect to the first and secondconductive layers.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a flip chip semiconductor device with solder bumps providingelectrical interconnect between an active area of the die and a chipcarrier substrate;

FIGS. 2 a-2 g illustrate a semiconductor package having similarstructure for top and bottom bond pads;

FIG. 3 illustrates wire bonds formed on the top bond pads;

FIG. 4 illustrates the semiconductor package containing multiplesemiconductor die;

FIG. 5 illustrates a flip chip semiconductor die mounted on thesemiconductor package;

FIG. 6 illustrates stacked semiconductor packages using one solder bump;

FIG. 7 illustrates stacked semiconductor packages using two solderbumps;

FIG. 8 illustrates stacked semiconductor packages in a laminate packagewith substrate having interconnect structure; and

FIG. 9 illustrates stacked semiconductor packages in a leaded package.

DETAILED DESCRIPTION OF THE DRAWINGS

The present invention is described in one or more embodiments in thefollowing description with reference to the Figures, in which likenumerals represent the same or similar elements. While the invention isdescribed in terms of the best mode for achieving the invention'sobjectives, it will be appreciated by those skilled in the art that itis intended to cover alternatives, modifications, and equivalents as maybe included within the spirit and scope of the invention as defined bythe appended claims and their equivalents as supported by the followingdisclosure and drawings.

The manufacture of semiconductor devices involves formation of a waferhaving a plurality of die. Each die contains hundreds or thousands oftransistors and other active and passive devices performing one or moreelectrical functions. For a given wafer, each die from the wafertypically performs the same electrical function. Front-end manufacturinggenerally refers to formation of the semiconductor devices on the wafer.The finished wafer has an active side containing the transistors andother active and passive components. Back-end manufacturing refers tocutting or singulating the finished wafer into the individual die andthen packaging the die for structural support and/or environmentalisolation.

A semiconductor wafer generally includes an active surface havingsemiconductor devices disposed thereon, and a backside surface formedwith bulk semiconductor material, e.g., silicon. The active side surfacecontains a plurality of semiconductor die. The active surface is formedby a variety of semiconductor processes, including layering, patterning,doping, and heat treatment. In the layering process, semiconductormaterials are grown or deposited on the substrate by techniquesinvolving thermal oxidation, nitridation, chemical vapor deposition,evaporation, and sputtering. Photolithography involves the masking ofareas of the surface and etching away undesired material to formspecific structures. The doping process injects concentrations of dopantmaterial by thermal diffusion or ion implantation.

Flip chip semiconductor packages and wafer level packages (WLP) arecommonly used with integrated circuits (ICs) demanding high speed, highdensity, and greater pin count. Flip chip style semiconductor device 10involves mounting an active area 12 of die 14 facedown toward a chipcarrier substrate or printed circuit board (PCB) 16, as shown in FIG. 1.Active area 12 contains active and passive devices, conductive layers,and dielectric layers according to the electrical design of the die. Theelectrical and mechanical interconnect is achieved through a solder bumpstructure 20 comprising a large number of individual conductive solderbumps or balls 22. The solder bumps are formed on bump pads orinterconnect sites 24, which are disposed on active area 12. The bumppads 24 connect to the active circuits by conduction tracks in activearea 12. The solder bumps 22 are electrically and mechanically connectedto contact pads or interconnect sites 26 on carrier substrate 16 by asolder reflow process. The flip chip semiconductor device provides ashort electrical conduction path from the active devices on die 14 toconduction tracks on carrier substrate 16 in order to reduce signalpropagation, lower capacitance, and achieve overall better circuitperformance.

FIGS. 2 a-2 g illustrate formation of a semiconductor package havingsimilar structure for top and bottom bond pads for use with WLCSP orother semiconductor devices. FIG. 2 a shows a thin insulating sheet orsubstrate 30. Substrate 30 can be made with silicon nitride (SixNy),silicon dioxide (SiO2), silicon oxynitride (SiON), tantalum pentoxide(Ta2O5), Zirconium (Zr) oxide, polyimide (PI), or other dielectricmaterial. The deposition of substrate 30 may involve physical vapordeposition (PVD) or chemical vapor deposition (CVD) with a thicknesssufficient to electrically insulate the die and minimize noise betweenthe die and other conductive components such as redistribution layers(RDLs). In an alternative embodiment, substrate 30 is at leastapproximately 5 μm thick.

A semiconductor die 32 is mounted on substrate 30 with a die attachadhesive such as thermal epoxy. Semiconductor die 32 has active andpassive devices, conductive layers, and dielectric layers on its activesurface according to the electrical design of the die. Semiconductor die32 further includes contact pads 34 for routing signals to the circuitsin the die. A photoresist material 36 is patterned and deposited oncontact pads 34.

In FIG. 2 b, additional insulating material 30 is deposited to enclosesemiconductor die 32. In FIG. 2 c, the structure is inverted.Photoresist 36 is removed to expose contact pads 34. Vias 40 are formedthrough substrate 30.

In FIG. 2 d, vias 40 are filled with conductive material such asaluminum (Al), copper (Cu), tin (Sn), nickel (Ni), gold (Au), and silver(Ag). An RDL 42 is deposited over a bottom surface of substrate 30 usinga patterning and deposition process. RDLs 42 can be made with Al, Ni,nickel vanadium (NiV), Cu, or Cu alloy. RDLs 42 can be made by anelectrolytic plating or electroless plating process. RDLs 42 can be madewith a single layer, or multiple layers using an adhesion layer oftitanium (Ti), titanium tungsten (TiW), or chromium (Cr). RDLs 42operate as an intermediate conduction layer or interconnect formed overthe bottom surface of substrate 30 in electrical contact with conductivevias 40 to route electrical signals to semiconductor die 32.

In FIG. 2 e, a passivation layer 44 is formed over substrate 30 forstructural support and physical isolation. Passivation layer 44 can haveone or more layers of SixNy, SiO2, SiON, PI, benzocyclobutene (BCB),polybenzoxazole (PBO), WPR, epoxy, or other insulating material. Aportion of passivation layer 44 is removed using a mask-defined etchingprocess to expose RDLs 42. A metal layer 46 is deposited overpassivation layer 44 and RDLs 42 by an evaporation, electrolyticplating, electroless plating, or screen printing process. Metal layer 46is an under bump metallization (UBM) layer or bonding pad. UBM 46 can bemade with Ti, Ni, NiV, Cu, or Cu alloy. UBMs 46 can be a multiple metalstack with adhesion layer, barrier layer, and wetting layer. Theadhesion layer is made with Ti, Cr, Al, TiW, or titanium nitride (TiN).The barrier layer can be made with Ni, NiV, CrCu, or TiW. The wettinglayer can be made with Cu, Au, or Ag. UBMs 46 can be electroless Ni orAu on RDLs 42 for both solder bumps and wire bonding.

In FIG. 2 f, the package is again inverted. RDLs 48 are deposited over atop surface of substrate 30, opposite the bottom surface of substrate30, using a patterning and deposition process. RDLs 48 can be made withAl, Ni, NiV, Cu, or Cu alloy. RDLs 48 can be made by an electrolyticplating or electroless plating process. RDLs 48 can be made with asingle layer, or multiple layers using an adhesion layer of Ti, TiW, orCr. RDLs 48 operate as an intermediate conduction layer or interconnectformed over the top surface of substrate 30 in electrical contact withconductive vias 40 to route electrical signals to semiconductor die 32.

A passivation layer 50 is formed over substrate 30 and RDLs 48 forstructural support and physical isolation. Passivation layer 50 can haveone or more layers of SixNy, SiO2, SiON, PI, BCB, PBO, WPR, epoxy, orother insulating material.

In FIG. 2 g, a portion of passivation layer 50 is removed using amask-defined etching process to expose RDLs 48. A metal layer 52 isdeposited over passivation layer 50 and RDLs 48 by an evaporation,electrolytic plating, electroless plating, or screen printing process.Metal layer 52 is a UBM layer or bonding pad. UBM 52 can be made withTi, Ni, NiV, Cu, or Cu alloy. UBMs 52 can be a multiple metal stack withadhesion layer, barrier layer, and wetting layer. The adhesion layer ismade with Ti, Cr, Al, TiW, or TiN. The barrier layer can be made withNi, NiV, CrCu, or TiW. The wetting layer can be made with Cu, Au, or Ag.UBMs 52 can be electroless Ni or Au on RDLs 48 for both solder bumps andwire bonding.

An electrically conductive solder material is deposited over UBMs 46 and52 using an electrolytic plating or electroless plating process. Thesolder material can be any metal or electrically conductive material,e.g., Sn, lead (Pb), Ni, Au, Ag, Cu, bismuthinite (Bi) and alloysthereof. In one embodiment, the solder material is 63 percent weight ofSn and 37 percent weight of Pb. The solder material is reflowed byheating the conductive material above its melting point to formspherical balls or bumps 54. In one embodiment, solder bumps 54 areabout 500 μm in height. In some applications, solder bumps 54 arereflowed a second time to improve electrical contact to the UBMstructure.

The semiconductor package 58 shown in FIG. 2 g has substantially similartop and bottom UBMs or bonding pads 46 and 52. The similar top andbottom UBMs or bonding pads allow the package to be stacked from eitherside. The solder bumps can vary in size. UBMs/bonding pads 46 and 52 mayhave no solder bump or wire bond formed on the pad. The top and bottombonding pads 46 and 52 are positioned by proper selection of length ofRDLs 42 and 48 such that a center area of the pads on opposite surfacesof the substrate is vertically aligned along lines 56. Contact pads 34electrically connect to bonding pad 52 through RDLs 48. Contact pads 34also electrically connect to bonding pads 46 through RDLs 48, conductivevias 40, and RDLs 42. RDLs 42 and 48 operate as intermediate conductionlayers or interconnects to electrically connect bonding pads 46 and 52through conductive vias 40 and route electrical signals to semiconductordie 32. The semiconductor package having substantially similar structurefor top and bottom bonding pads allows for efficient stacking ofsemiconductor devices such as memory devices. The vertical alignment ofthe top and bottom bonding pads simplifies the stacking arrangement ofthe semiconductor packages. In addition, the semiconductor package 58requires no wire bonding, spacers, film, or epoxy, which savesmanufacturing costs.

FIG. 3 is a cross-sectional view of another embodiment of thesemiconductor package having similar structure for top and bottom bondpads. As described in FIGS. 2 a-2 g, a thin insulating sheet orsubstrate 30 is provided. A semiconductor die 32 is mounted to substrate30 with a die attach adhesive such as thermal epoxy. Semiconductor die32 has active and passive devices, conductive layers, and dielectriclayers on its active surface according to the electrical design of thedie. Semiconductor die 32 further includes contact pads 34 for routingsignals to the circuits in the die. A photoresist material 36 ispatterned and deposited on contact pads 34. Additional insulatingmaterial 30 is deposited to enclose semiconductor die 32. Photoresist 36is removed to expose contact pads 34. Vias 40 are formed throughsubstrate 30. Vias 40 are filled with conductive material. RDL 42 isdeposited over the bottom surface of substrate 30 using a patterning anddeposition process. RDLs 42 operate as an intermediate conduction layeror interconnect in electrical contact with conductive vias 40 to routeelectrical signals to semiconductor die 32. A passivation layer 44 isformed over substrate 30 for structural support and physical isolation.A portion of passivation layer 44 is removed using a mask-definedetching process to expose RDLs 42. UBM 46 is deposited over passivationlayer 44 and RDLs 42. RDLs 48 is deposited over the top surface ofsubstrate 30 using a patterning and deposition process. RDLs 48 operateas an intermediate conduction layer or interconnect in electricalcontact with conductive vias 40 to route electrical signals tosemiconductor die 32. A passivation layer 50 is formed over substrate 30and RDLs 48 for structural support and physical isolation. A portion ofpassivation layer 50 is removed using a mask-defined etching process toexpose RDLs 48. UBM 52 is deposited over passivation layer 50 and RDLs48. An electrically conductive solder material is deposited over UBMs 46using an electrolytic plating or electroless plating process. The soldermaterial is reflowed by heating the conductive material above itsmelting point to form spherical balls or bumps 54. Bond wires 60 areelectrically connected to bonding pads 52 with wire bonds 62. Bond wire60 can be made with Au.

The semiconductor package shown in FIG. 3 has substantially similar topand bottom UBMs or bonding pads 46 and 52. In this case, bond wires 60connect to bonding pads 52, while solder bumps 54 are formed on UBMs 46.The top and bottom bonding pads 46 and 52 are positioned by properselection of length of RDLs 42 and 48 such that a center area of thepads on opposite surfaces of substrate 30 is vertically aligned alonglines 56.

Another embodiment of semiconductor package 68 is shown in FIG. 4.Similar to the description in FIGS. 2 a-2 g, a thin insulating sheet orsubstrate 30 is provided. A semiconductor die 32 is mounted to substrate30 with a die attach adhesive such as thermal epoxy. Semiconductor die32 has active and passive devices, conductive layers, and dielectriclayers on its active surface according to the electrical design of thedie. Semiconductor die 32 further includes contact pads 34 for routingsignals to the circuits in the die. A photoresist material 36 ispatterned and deposited on contact pads 34. Additional insulatingmaterial 30 is deposited to enclose semiconductor die 32. Photoresist 36is removed to expose contact pads 34. Vias 40 are formed throughsubstrate 30. Vias 40 are filled with conductive material. A portion ofthe bottom surface of substrate 30 is removed to form RDLs 42 using apatterning and deposition process. RDLs 42 operate as an intermediateconduction layer or interconnect in electrical contact with conductivevias 40 to route electrical signals to semiconductor die 32. RDL 48 isdeposited over the top surface of substrate 30 using a patterning anddeposition process. RDLs 48 operate as an intermediate conduction layeror interconnect in electrical contact with conductive vias 40 to routeelectrical signals to semiconductor die 32. A passivation layer 50 isformed over substrate 30 and RDLs 48 for structural support and physicalisolation. A portion of passivation layer 50 is removed using amask-defined etching process to expose RDLs 48. UBM 52 is deposited overpassivation layer 50 and RDLs 48.

In the embodiment of FIG. 4, a semiconductor die 70 is mounted tosubstrate 30 with a die attach adhesive such as thermal epoxy.Semiconductor die 70 has active and passive devices, conductive layers,and dielectric layers on its active surface according to the electricaldesign of the die. Semiconductor die 70 further includes contact pads 72for routing signals to the circuits in the die. Contacts pads 72 areelectrically connected to RDLs 42. A passivation layer 74 is formed oversubstrate 30 and semiconductor die 70 for structural support andphysical isolation. Passivation layer 74 can have one or more layers ofSixNy, SiO2, SiON, PI, BCB, PBO, WPR, epoxy, or other insulatingmaterial. A portion of passivation layer 74 is removed using amask-defined etching process to expose RDLs 42. A metal layer 76 isdeposited over passivation layer 74 and RDLs 42 by an evaporation,electrolytic plating, electroless plating, or screen printing process.Metal layer 76 is a UBM layer or bonding pad. UBM 76 can be made withTi, Ni, NiV, Cu, or Cu alloy. UBMs 76 can be a multiple metal stack withadhesion layer, barrier layer, and wetting layer. The adhesion layer ismade with Ti, Cr, Al, TiW, or TiN. The barrier layer can be made withNi, NiV, CrCu, or TiW. The wetting layer can be made with Cu, Au, or Ag.

An electrically conductive solder material is deposited over UBMs 52 and76 using an electrolytic plating or electroless plating process. Thesolder material is reflowed by heating the conductive material above itsmelting point to form spherical balls or bumps 54 and 78. In oneembodiment, solder bumps 54 and 78 are about 500 μm in height. In someapplications, solder bumps 54 and 78 are reflowed a second time toimprove electrical contact to the UBM structure.

The semiconductor package 68 shown in FIG. 4 has substantially similartop and bottom UBMs or bonding pads 46 and 52. In this case, multiplesemiconductor die 32 and 70 are disposed within the package. The top andbottom UBM/bonding pads 46 and 52 are positioned by proper selection oflength of RDLs 42 and 48 such that a center area of the pads on oppositesurfaces of substrate 30 is vertically aligned along lines 56. Contactpads 34 of semiconductor die 32 electrically connect to bonding pad 52through RDLs 48. Contact pads 34 also electrically connect to bondingpads 76 and further electrically connect to contact pads 72 ofsemiconductor die 70 through RDLs 48, conductive vias 40, and RDLs 42.RDLs 42 and 48 operate as an intermediate conduction layers orinterconnects to electrically connect bonding pads 52 and 76 throughconductive vias 40 and route electrical signals to semiconductor die 32and 70. The vertical alignment of the top and bottom bonding padssimplifies the stacking arrangement of the semiconductor packages. Inaddition, the semiconductor package 68 requires no wire bonding,spacers, film, or epoxy, which saves manufacturing costs.

In FIG. 5, the semiconductor package 68 of FIG. 4 is inverted. A flipchip style semiconductor die 80 has active and passive devices,conductive layers, and dielectric layers on its active surface accordingto the electrical design of the die. Semiconductor die 80 furtherincludes contact pads 82 for routing signals to the circuits in the die.Contact pads 82 are electrically connected to UBMs 76 by solder bumps84. A portion of UBMs 76 narrows or fans-in to a finer pitch toaccommodate solder bumps 84, which are substantially smaller than solderbumps 78. In fact, the height of semiconductor die 80, as mounted onsemiconductor package 68, is about 300 μm. The metallurgical bonding ofsolder bump 78 to another package reduces its height by about 30% or toabout 350 μm, which provides about 50 μm of clearance for flip chipsemiconductor die 80. An underfill material 90 is disposed undersemiconductor die 80. The underfill material 90 can be made with epoxy,polymeric material, film, or other non-conductive material. The flipchip semiconductor die can be mounted on either side of semiconductorpackage 58 or 68.

FIG. 6 illustrates two stacked semiconductor packages like 68. Thesolder bumps 78 formed on UBMs 76 metallurgically bond to UBMs 52 on theadjacent semiconductor package, which has no solder bump. The stackedsemiconductor packages use only one solder bump for interconnect, whichreduces stacking height. Again, the vertical alignment of the top andbottom bonding pads simplifies the stacking arrangement of thesemiconductor packages.

FIG. 7 illustrates two stacked semiconductor packages like 58. Thesolder bumps 54 formed on UBMs 46 metallurgically bond to solder bumpson UBMs 52 on adjacent semiconductor package. Again, the verticalalignment of the top and bottom bonding pads simplifies the stackingarrangement of the semiconductor packages.

FIG. 8 illustrates the stacked semiconductor packages in a laminatepackage 94 with a substrate having electrical interconnects 96. FIG. 9illustrates stacked semiconductor packages with chip-on-lead formationin leaded package 98.

While one or more embodiments of the present invention have beenillustrated in detail, the skilled artisan will appreciate thatmodifications and adaptations to those embodiments may be made withoutdeparting from the scope of the present invention as set forth in thefollowing claims.

What is claimed:
 1. A semiconductor device, comprising: a firstsemiconductor die; a plurality of conductive vias formed around thefirst semiconductor die; a first conductive layer formed over a firstsurface of the first semiconductor die and electrically connected to theplurality of conductive vias; a second conductive layer formed over asecond surface of the first semiconductor die opposite the first surfaceand electrically connected to the plurality of conductive vias; a firstinsulating layer formed over the first surface of the firstsemiconductor die and including openings exposing the first conductivelayer; a second insulating layer formed over the second surface of thefirst semiconductor die and including openings exposing the secondconductive layer; a plurality of bonding pads formed within the openingsin the first and second insulating layers; and an interconnect structuredisposed within the openings in the first and second insulating layers.2. The semiconductor device of claim 1, wherein the interconnectstructure includes a bump or wire bond.
 3. The semiconductor device ofclaim 1, further including a second semiconductor die disposed over thesemiconductor device, wherein a height of the second semiconductor dieis less than a height of the interconnect structure.
 4. Thesemiconductor device of claim 1, wherein the openings in the first andsecond insulating layers are formed outside a footprint of the firstsemiconductor die.
 5. The semiconductor device of claim 1, furtherincluding: a second semiconductor die disposed over the second surfaceof the first semiconductor die and electrically connected to the secondconductive layer; and the second insulating layer formed over the secondsemiconductor die.
 6. The semiconductor device of claim 1, furtherincluding a plurality of semiconductor devices stacked and electricallyconnected through the bonding pads.
 7. A semiconductor device,comprising: a first semiconductor die; a first conductive layer formedover a first surface of the first semiconductor die; a second conductivelayer formed over a second surface of the first semiconductor dieopposite the first surface; a first insulating layer including a firstopening formed over the first surface of the first semiconductor die; asecond insulating layer including a second opening formed over thesecond surface of the first semiconductor die; a first bonding padformed within the first opening of the first insulating layer; a secondbonding pad formed within the second opening of the second insulatinglayer and aligned with the first bonding pad; and an interconnectstructure disposed within the first and second openings of the first andsecond insulating layers.
 8. The semiconductor device of claim 7,wherein the interconnect structure includes a bump or wire bond.
 9. Thesemiconductor device of claim 7, further including a secondsemiconductor die disposed over the semiconductor device, wherein aheight of the second semiconductor die is less than a height of theinterconnect structure.
 10. A semiconductor device, comprising: a firstsemiconductor die; a conductive via formed adjacent to the firstsemiconductor die; a first bonding pad formed over a first surface ofthe first semiconductor die and coupled to the conductive via; a firstinterconnect structure disposed in a recessed portion of the firstbonding pad; and a second bonding pad formed over a second surface ofthe first semiconductor die and coupled to the conductive via with thesecond bonding pad vertically aligned with the recessed portion of thefirst bonding pad.
 11. The semiconductor device of claim 10, furtherincluding a second interconnect structure disposed over the secondbonding pad.
 12. The semiconductor device of claim 10, further includinga plurality of semiconductor devices stacked and electrically connectedthrough the first and second bonding pads.
 13. The semiconductor deviceof claim 10, further including: a first conductive layer formed over thefirst surface of the first semiconductor die; a second conductive layerformed over the second surface of the first semiconductor die; a firstinsulating layer including a first opening exposing the first conductivelayer formed over the first surface of the first semiconductor die; anda second insulating layer including a second opening exposing the secondconductive layer formed over the second surface of the firstsemiconductor die.
 14. The semiconductor device of claim 11, furtherincluding a second semiconductor die disposed over the semiconductordevice, wherein a height of the second semiconductor die is less than aheight of the first interconnect structure.
 15. The semiconductor deviceof claim 13, wherein the first bonding pad follows a contour of thefirst opening of the first insulating layer and the second bonding padfollows a contour of the second opening of the second insulating layer.16. The semiconductor device of claim 13, further including a secondsemiconductor die disposed over the second surface of the firstsemiconductor die with the second insulating layer formed over thesecond semiconductor die.
 17. The semiconductor device of claim 13,wherein the first bonding pad is formed within the first opening of thefirst insulating layer and the second bonding pad is formed within thesecond opening of the second insulating layer.
 18. A semiconductordevice, comprising: a first semiconductor die; a first conductive layerformed over a first surface of the first semiconductor die; a secondconductive layer formed over a second surface of the first semiconductordie opposite the first surface; a plurality of conductive vias formedaround the first semiconductor die and electrically connected to thefirst and second conductive layers a first insulating layer including afirst opening formed over the first surface of the first semiconductordie; a second insulating layer including a second opening verticallyaligned with the first opening of the first insulating layer and formedover the second surface of the first semiconductor die; a first bondingpad formed within the first opening of the first insulating layer; and asecond bonding pad formed within the second opening of the secondinsulating layer.
 19. The semiconductor device of claim 18, furtherincluding a second semiconductor die disposed over the second surface ofthe first semiconductor die with a portion of the second insulatinglayer disposed over the second semiconductor die.
 20. The semiconductordevice of claim 18, further including a plurality of semiconductordevices stacked and electrically connected through the first and secondbonding pads.